China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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silicon carbide modules 1200v

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

Contact Person:
Mr.Sales Manager
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silicon carbide modules 1200v

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30A Integrated Circuit Chip MSC030SDA120B Rectifiers Single Diodes TO-247-2​ Product Description Of MSC030SDA120B MSC030SDA120B is a 1200 V, 30 A ... 2025-07-18 00:21:47
...IMW65R030M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power Device, it is built over the solid silicon carbide technology. Specification Of ... 2025-07-14 00:20:07
... solid silicon carbide technology. Specification Of IMZA65R027M1H Part Number IMZA65R027M1H Power Dissipation (Max) 189W (Tc) Operating Temperature ... 2025-07-18 00:21:53
...silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, ... 2025-07-14 00:20:09
... TO-263-8 1700V​ Product Description Of IMBF170R1K0M1 IMBF170R1K0M1 is CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Transistors, ... 2025-07-14 00:19:58
... Transistors TO-247-3 SiCFET​ Product Description Of IMW120R220M1H IMW120R220M1H is a 1200 V CoolSiC™ trench-type silicon carbide MOSFET monotube ... 2025-07-18 00:21:52
... Of IMW65R027M1H Part Number IMW65R027M1H Technology SiCFET (Silicon Carbide) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs ... 2025-07-18 00:21:52
...Automotive Schottky Diode, 650 V 10A Surface Mount. Specification Of AIDK10S65C5ATMA1 Part Number AIDK10S65C5ATMA1 Technology SiC (Silicon Carbide) ... 2025-07-18 00:21:52
...SiC MOSFET TO-268-3 Integrated Circuit Chip​ Product Description Of MSC180SMA120S MSC180SMA120S is a 1200 V, 180 mΩ Silicon Carbide N-Channel Power ... 2025-07-14 00:20:07
... MSC017SMA120B4 TO-247-4 Integrated Circuit Chip​ Product Description Of MSC017SMA120B4 MSC017SMA120B4 is a 1200 V, 17 mΩ Silicon Carbide N-Channel ... 2025-07-18 00:21:37
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