SiC Trench MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V

SiC Trench MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V​

Product Description Of IMBF170R1K0M1

IMBF170R1K0M1 is CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Transistors, Enabling higher frequency.

Specification Of IMBF170R1K0M1

Features Of IMBF170R1K0M1

• Revolutionary semiconductor material - Silicon Carbide
• Optimized for fly-back topologies
• 12V/0V gate-source voltage compatible with most fly-back controllers
• Very low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5V
• Fully controllable dV/dt for EMI optimization

Other Supply Product Types

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.