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silicon carbide modules 1200v
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... Transistors TO-247-3 SiCFET Product Description Of IMW120R220M1H IMW120R220M1H is a 1200 V CoolSiC™ trench-type silicon carbide MOSFET monotube ...
2025-07-24 00:25:03
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... Of IMW65R027M1H Part Number IMW65R027M1H Technology SiCFET (Silicon Carbide) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs ...
2025-07-24 00:25:03
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...Automotive Schottky Diode, 650 V 10A Surface Mount. Specification Of AIDK10S65C5ATMA1 Part Number AIDK10S65C5ATMA1 Technology SiC (Silicon Carbide) ...
2025-07-24 00:25:03
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...SiC MOSFET TO-268-3 Integrated Circuit Chip Product Description Of MSC180SMA120S MSC180SMA120S is a 1200 V, 180 mΩ Silicon Carbide N-Channel Power ...
2025-07-14 00:20:07
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... MSC017SMA120B4 TO-247-4 Integrated Circuit Chip Product Description Of MSC017SMA120B4 MSC017SMA120B4 is a 1200 V, 17 mΩ Silicon Carbide N-Channel ...
2025-07-24 00:24:49
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...MSC017SMA120S Single FETs MOSFETs Transistors TO-268-3 Product Description Of MSC017SMA120S MSC017SMA120S is a 1200 V, 17 mΩ Silicon Carbide N...
2025-07-14 00:20:07
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...MOSFET MSC750SMA170S Integrated Circuit Chip TO-268-3 Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ Silicon Carbide N...
2025-07-14 00:20:07
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...low internal gate resistance (ESR). Specification Of MSC090SMA070S Part Number MSC090SMA070S FET Type N-Channel Technology SiCFET (Silicon Carbide) ...
2025-07-24 00:25:01
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... enhances the unique benefits of device performance, robustness and ease of use by maximizing the powerful physical properties of silicon carbide. ...
2025-07-24 00:24:37
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... SMD package based on silicon carbide trench technology for high power applications. Specification Of IMBG65R030M1HXTMA1 Part Number IMBG65R030M1HX...
2025-07-24 00:25:01
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