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silicon carbide modules 1200v
Selling leads
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Sensor IC AFBR-S4K33P6415L Silicon Photomultiplier Arrays Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + ...
2025-06-22 00:16:23
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Integrated Circuit Chip MPX5700A Board Mount Pressure Sensors 6-SIP Module Product Description Of MPX5700A MPX5700A piezoresistive transducer is a ...
2025-06-22 00:16:24
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... MOSFET Transistors. Specification Of IMZ120R090M1H Part Number IMZ120R090M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon ...
2025-07-14 00:20:03
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... is TO-247-4, Through Hole. Specification Of IMZ120R140M1H Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain ...
2025-07-18 00:21:53
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... Hole. Specification Of TW030N120C,S1F Part Number: TW030N120C,S1F Technology: SiCFET (Silicon Carbide) Input Capacitance: 2925pF Gate Threshold ...
2025-07-14 00:20:06
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... Single FETs Transistors, 160 mohm, 1200V, M1, Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance ...
2025-07-18 00:21:53
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...Single FETs Transistors TO-247-3 N-Channel Product Description Of TW140N120C,S1F TW140N120C,S1F is 1200V 20A(Tc) 107W(Tc) N-Channel Silicon ...
2025-07-14 00:20:06
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...Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared ...
2025-07-18 00:21:48
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... - Average Rectified (Io) 27A Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A Avalanche Rated 49 mJ Technology SiC (Silicon Carbide)
2025-07-18 00:21:37
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... Carbide (SiC) Schottky Barrier Diodes (SBDs). Specification Of MSC030SDA170B Part Number MSC030SDA170B Technology SiC (Silicon Carbide) Schottky ...
2025-07-18 00:21:47
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