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to264 polar power mosfet
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IRFP260MPBF N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : MOSFETS-Single Packaging :Tube Part state: ACTIVE FET ...
2024-12-09 22:48:58
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...Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ...
2024-12-09 22:38:38
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... has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power ...
2024-12-09 22:41:27
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ingle Pole, Normally Open, 0-250V, 190mA AC/DC Features " HEXFET Power MOSFET output " Bounce-free operation " 4,000 VRMS I/O isolation " Load current ...
2024-12-09 22:41:27
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IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT ...
2024-12-09 22:37:47
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... l Fast Switching l Fully Avalanche Rated Key Specifications: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced ...
2024-12-09 22:38:38
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BF245B N-Channel Amplifiers switching power mosfet low power mosfet N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced ...
2024-12-09 22:38:38
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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V Power MOSFET IXFQ60N50P3 I D25 = ...
2024-12-09 22:38:38
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HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • ...
2024-12-09 22:38:51
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IRFZ34NPbF HEXFET® Power MOSFET • Advanced Process • Technology Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast ...
2024-12-09 22:38:51
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