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tlv62565dbvr power switching regulator
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... = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the ...
2024-12-09 22:38:51
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... Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and ...
2024-12-09 22:38:51
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Silicon NPN Power Transistors BD439 BD441 DESCRIPTION • With TO-126 package • Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and ...
2024-12-09 22:38:51
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...enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced ...
2024-12-09 22:38:51
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TIP107 DarliCM GROUPon Power Transistors (PNP) complementary silicon power transistors Features • Designed for general-purpose amplifier and low speed ...
2024-12-09 22:38:51
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... has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power ...
2024-12-09 22:41:27
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... Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to ...
2024-12-09 22:41:27
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Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output ...
2024-12-09 22:41:27
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...Power Transistors TIP125/126/127 DESCRIPTION ·With TO-220C package ·DARLCM GROUPON ·High DC durrent gain ·Low collector saturation voltage ...
2024-12-09 22:41:27
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...PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). ...
2024-12-09 22:41:27
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