BD439 Power Mosfet module Plastic Medium Power Silicon NPN Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	BD439
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	10000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor NPN 60 V 4 A 3MHz 36 W Through Hole TO-126
Collector-base voltage	60 V
Collector-emitter voltage	60 V
Emitter -base voltage	5 V
Collector current (DC)	4 A
Collector current-Peak	7 A
Base current	1 A

Detailed Product Description

Silicon NPN Power Transistors

BD439 BD441

DESCRIPTION

• With TO-126 package

• Complement to type BD440,BD442

APPLICATIONS

·For medium power linear and switching applications

PINNING

PIN	DESCRIPTION
1	Emitter
2	Collector;connected to mounting base
3	Base

Absolute maximum ratings (Ta=25℃)

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	BD439	Open emitter	60	V
V_CBO	Collector-base voltage	BD441	Open emitter	80	V
V_CEO	Collector-emitter voltage	BD439	Open base	60	V
V_CEO	Collector-emitter voltage	BD441	Open base	80	V
V_EBO	Emitter -base voltage		Open collector	5	V
I_C	Collector current (DC)			4	A
I_CM	Collector current-Peak			7	A
I_B	Base current			1	A
P_C	Collector power dissipation		T_C=25℃	36	W
Tj	Junction temperature			150	℃
Tstg	Storage temperature			-65~150	℃

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Product Tags: power mosfet ic multi emitter transistor

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