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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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stm32f407vet6 controller ic chip

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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stm32f407vet6 controller ic chip

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Silicon PNP DarliCM GROUPon Power Transistors TIP125/126/127 DESCRIPTION ·With TO-220C package ·DARLCM GROUPON ·High DC durrent gain ·Low collector ... 2024-12-09 22:41:27
Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, ... 2024-12-09 22:41:27
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter ... 2024-12-09 22:41:27
BFQ67W SOT-23 Electronics Integrated Circuits Complementary Silicon NPN Planar RF Transistor Features • Small feedback capacitance • Low noise figure ... 2024-12-09 22:41:27
A1302KUA Power Mosfet Transistor Continuous Time Ratiometric Linear Hall Effect Sensors Features and Benefits ►Low-noise output ►Fast power-on time ... 2024-12-09 22:41:27
MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device ... 2024-12-09 22:41:27
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order ... 2024-12-09 22:41:27
P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4... 2024-12-09 22:41:27
MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors MJD112 (NPN) MJD117 (PNP) Complementary DarliCM GROUPon ... 2024-12-09 22:41:27
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ... 2024-12-09 22:41:27
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