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s0t223 ac switching ic
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ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia) The ULN2803APG / AFWG Series are high−voltage, high−current darliCM ...
2024-12-09 22:41:27
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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V AO3400A N - Channel Enhancement Mode Field Effect Transistor General Description ...
2024-12-09 22:41:27
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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate Features ·With TO-220AB package ·Glass passivated, sensitive gate ...
2024-12-09 22:41:27
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AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON...
2024-12-09 22:41:27
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FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ....
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FEATURES • Ultrafast recovery • Ultrasoft recovery • Very low IRRM • Very low Qrr • Specified at operating conditions • Designed and qualified for ...
2024-12-09 22:41:27
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GENERAL DESCRIPTION Glasspassivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose ...
2024-12-09 22:41:27
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MUR1620CTR, MURB1620CTR SWITCHMODE™ Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS These state−of−the−art devices are designed for use in ...
2024-12-09 22:41:27
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TMBYV10-40FILM SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and ...
2024-12-09 22:41:27
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BYV27/... Ultra Fast Silicon Mesa Rectifiers Features • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass ...
2024-12-09 22:41:27
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