Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

AO3400A N

- Channel Enhancement Mode Field Effect Transistor

Thermal Characteristics

A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007