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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Brand Name ALPHA
Model Number AO3400A
Certification Original Factory Pack
Place of Origin China
Minimum Order Quantity 20pcs
Price negotiation
Payment Terms T/T in advance or others, Western Union,Payapl
Supply Ability 5200PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Shipment DHL, Fedex, TNT, EMS etc
Main Line Ic,module,transistor,diodes,capacitor,resistor etc
Gate-Source Voltage ±12 V
Drain-Source Voltage 30V
Temperature Range -55 to 150 °C
Power Dissipation 0.9 to 1.4W
Continuous Drain Current 4.7 to 5.7 A
Package SOT-23 (TO-236)
Detailed Product Description

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

 

 

AO3400A N

- Channel Enhancement Mode Field Effect Transistor

 

General DescriptionFeature
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = 30V

ID = 5.7A (VGS = 10V)

RDS(ON) < 26.5mΩ (VGS = 10V)

RDS(ON) < 32mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

 

 

Thermal Characteristics

 

ParameterSymbolTypMaxUnit
Maximum Junction-to-Ambient At ≤ 10sRθJA

70

90°C/W
Maximum Junction-to-Ambient ASteady-State100125°C/W
Maximum Junction-to-Lead CSteady-StateRθJL6380°C/W

 

A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007

 

Product Tags: power mosfet ic   silicon power transistors  
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