Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V
|
Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V
AO3400A N - Channel Enhancement Mode Field Effect Transistor
Thermal Characteristics
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007
|
|||||||||||||||||||||||||||
Product Tags: power mosfet ic silicon power transistors |