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rohs fast switching diode
Selling leads
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... low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs ...
2024-12-09 22:37:47
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... Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ...
2024-12-09 22:38:25
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... Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO = 70 V • Low Saturation Voltage • Fast Switching Times • Low CTR Degradation • ...
2024-12-09 22:38:25
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... flat over the specified analog signal range (10Ω max). They also offer low leakage over temperature (NO-off leakage current less than 2nA at +85°C...
2024-12-09 22:38:38
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IRFPE50 Transistor Electronics Components electronic Power MOSFET Features • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central ...
2024-12-09 22:38:38
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
2024-12-09 22:38:38
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IRF9540NPBF 0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts Features: Lead Free Advanced process technology Dynamic Dt/Dv ...
2024-12-09 22:38:38
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... TV Ic Memory Flash Chip 30A SCHOTTKY BARRIER RECTIFIER FEATURES: • Low Forward Voltage Drop • Soft, Fast Switching Capability • Schottky Barrier ...
2024-12-09 22:38:38
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... extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power ...
2024-12-09 22:38:38
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IRFP9240, SiHFP9240 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast ...
2024-12-09 22:38:51
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