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rmii ethernet switch ic
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2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage ...
2024-12-09 22:38:51
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BYV26EGP-E3/73 Glass Passivated Ultrafast Rectifier FEATURES Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage ...
2024-12-09 22:38:51
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MAIN FEATURES: Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 800 V IG (Q1) 5 to 50 mA DESCRIPTION Suitable for AC switching operations, the BTA/ ...
2024-12-09 22:38:51
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GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage ...
2024-12-09 22:38:51
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Thyristors BT151 series GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high ...
2024-12-09 22:38:51
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TIP107 DarliCM GROUPon Power Transistors (PNP) complementary silicon power transistors Features • Designed for general-purpose amplifier and low speed ...
2024-12-09 22:38:51
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NTF3055L108T1G Power MOSFET 3.0 A, 60 V linear power mosfet trench power mosfet Features • Pb−Free Packages are Available Applications • Power ...
2024-12-09 22:41:27
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NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are ...
2024-12-09 22:41:27
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FDS5690 60V N-Channel PowerTrench MOSFET smd power mosfet linear power mosfet Features • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ ...
2024-12-09 22:41:27
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FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor General Description This P-Channel MOSFET is a rugged gate version of ...
2024-12-09 22:41:27
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