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power mosfet ic
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SGP02N120, SGB02N120, SGD02N120 Fast S-IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs ...
2026-01-05 15:51:23
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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter ...
2026-01-05 15:51:23
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BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ...
2026-01-05 15:51:23
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. . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an ...
2026-01-05 15:51:23
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High Current Lead Mounted Rectifiers Features • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case ...
2026-01-05 15:51:23
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BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ...
2026-01-05 15:51:23
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NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS ...
2026-01-05 15:51:23
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ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia) The ULN2803APG / AFWG Series are high−voltage, high−current darliCM ...
2026-01-05 15:51:23
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AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON...
2026-01-05 15:51:23
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PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial ...
2026-01-05 15:51:23
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