61 - 70 of 794
power mosfet driver
Selling leads
|
... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is ...
2024-12-09 22:37:59
|
|
... Power MOSFET Transistor general purpose mosfet ►Advanced Process ►Technology Ultra Low On-Resistance ►Dynamic dv/dt Rating 175°C ►Operating ...
2024-12-09 22:38:38
|
|
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology ...
2024-12-09 22:41:27
|
|
...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This ...
2024-12-09 22:41:27
|
|
... dual power mosfet audio power mosfet FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame ...
2024-12-09 22:41:27
|
|
...Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current ...
2024-12-09 22:41:27
|
|
TYN1225RG Standard 25 A SCRs linear power mosfet trench power mosfet Features ■ On-state rms current, IT(RMS) 25 A ■ Repetitive peak off-state voltage...
2024-12-09 22:38:38
|
|
...Power Mosfet IC IRF1404PBF Advanced Ultra Low On-Resistance Description Seventh Generation HEXFETÆ Power MOSFETs from International Rectifier ...
2024-12-09 22:38:38
|
|
...Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single FEATURES • ...
2024-12-09 22:38:51
|
|
... Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on...
2024-12-09 22:38:51
|