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high voltage transistor
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... Emitter-Base Voltage VEBO 6 6 6 Vdc Collector Current Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Total ...
2024-12-09 22:41:27
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...TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous ...
2024-12-09 22:38:51
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...Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose ...
2024-12-09 22:41:27
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.... @IC=-0.15A ·Complementary to BD139. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector...
2024-12-09 22:38:38
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...Transistor (−100V , −2A) 2SB1580 / 2SB1316 Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base and ...
2024-12-09 22:41:27
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...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
2024-12-09 22:37:59
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...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
2024-12-09 22:41:27
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... optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI ...
2024-12-09 22:41:27
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PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial ...
2024-12-09 22:41:27
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...high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch ...
2024-12-09 22:37:47
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