China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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high voltage transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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high voltage transistor

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...Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high ... 2024-12-09 22:38:51
...Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high ... 2024-12-09 22:41:27
...transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) ... 2024-12-09 22:41:27
...Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's ... 2024-12-09 22:41:27
...Plastic Power Transistors Features •Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter Sustaining ... 2024-12-09 22:38:38
...Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... 2024-12-09 22:48:58
... transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The ... 2024-12-09 22:41:27
...Transistors 3904 TRANSISTOR NPN Complementary to MMBT3906 MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM ... 2024-12-09 22:37:32
...Transistors NPN 40V 200mA 1AM 100-300 SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING... 2024-12-09 22:37:32
... ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage 2SC4883 Open emitter 150 V 2SC4883A 180 V VCEO Collector... 2024-12-09 22:38:38
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