PBSS4112PANP,115 Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

PBSS4112PAN

120 V, 1 A NPN/NPN low VCEsat (BISS) transistor

General description

NPN/NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.

Features and benefits

• Very low collector-emitter saturation voltage V_CEsat

• High collector current capability I_C and I_CM

• High collector current gain h_FE at high I_C

• Reduced Printed-Circuit Board (PCB) requirements

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.

[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.

[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.

[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

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