New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	2SB1316
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor PNP - DarliCM GROUPon 100 V 2 A 50MHz 10 W Surface Mount CPT3
Collector-base voltage	-100 V
Collector-emitter voltage	-100 V
Emitter-base voltage	- 8 V
Junction temperature	150°C
Storage temperature	-55 to +150°C
Collector current	-2 A(DC)

Detailed Product Description

Power Transistor (−100V , −2A) 2SB1580 / 2SB1316

Features

1) DarliCM GROUPon connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

4) Complements the 2SD2195 / 2SD1980.

External dimensions (Unit : mm)

Absolute maximum ratings (Ta = 25°C)

Parameter		Symbol	Limits	Unit
Collector-base voltage		V_CBO	-100	V
Collector-emitter voltage		V_CEO	-100	V
Emitter-base voltage		V_EBO	-8	V
Collector current		I_C	-2	A(DC)
			-3	A(Pulse) ^∗1
Collector power dissipation	2SB1580	P_C	2	W ^∗2
	2SB1316		1
			10	W(Tc=25°C)
Junction temperature		T_j	150	°C
Storage temperature		T_stg	-55 to +150	°C

∗1 Single pulse Pw=100ms

∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.

Packaging specifications and h_FE

∗ Denotes h_FE

Electrical characteristics curve

Product Tags: power mosfet ic multi emitter transistor

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