TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

TLP733, TLP734

Office Machine

Household Use Equipment

Solid State Relay

Switching Power Supply

The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP734 is no−base internal connection for high−EMI environments.

• Collector−emitter voltage: 55 V (min.)
• Current transfer ratio: 50% (min.)                                   
  • Rank GB: 100% (min.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 1994
  • Certificate no. 7364
  • BS EN60950: 1992
  • Certificate no. 7365
• SEMKO approved: SS4330784
  • Certificate no. 9325163, 9522142
• Isolation voltage: 4000 Vrms (min.)
• Option (D4) type
  • VDE approved: DIN VDE0884 / 06.92,
    • Certificate no. 74286, 91808
  • Maximum operating insulation voltage: 630, 890 VPK
  • Highest permissible over voltage: 6000, 8000 VPK

(Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”

                                            7.62 mm pich       10.16 mm pich

                                            standard type       TLP×××F type 

Creepage distance             : 7.0 mm (min.)      8.0 mm (min.)

Clearance                           : 7.0 mm (min.)      8.0 mm (min.)

Internal creepage path        : 4.0 mm (min.)      4.0 mm (min.)

Insulation thickness             : 0.5 mm (min.)      0.5 mm (min.) 

Maximum Ratings (Ta = 25°C)

Weight: 0.42 g

                Pin Configurations (top view)

           TLP733

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base

           TLP734

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc