821 - 830 of 921
high speed mosfet transistor
Selling leads
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...-A115-A exceeds 200 V ■ Multiple package options ■ Specified from −40 °C to +85 °C and from −40 °C to +125 °C GENERAL DESCRIPTION The 74HC244; ...
2024-12-09 22:38:25
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... Circuit FEATURES • Output capability: standard • ICC category: SSI GENERAL DESCRIPTION The 74HC/HCT132 are high-speed Si-gate CMOS devices and are ...
2024-12-09 22:38:25
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... amplifier IC utilizes new circuit and processing techniques to deliver low noise, high speed and wide bandwidth without increasing external ...
2024-12-09 22:38:25
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...exceeds 200 V. • Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION The 74HC/HCT08 are high-speed Si-gate CMOS devices and are pin ...
2024-12-09 22:38:25
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... to +85 °C and −40 to +125 °C. DESCRIPTION The 74HC00/74HCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky ...
2024-12-09 22:38:25
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... Error 0.02% Differential Phase Error Low Power 5.5 mA/Amp Max Power Supply Current (55 mW) High Speed and Fast Settling 600 MHz, –3 dB Bandwidth ...
2024-12-09 22:38:25
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...and −40 to +125 °C. DESCRIPTION The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They ...
2024-12-09 22:38:25
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... pincount Flash microcontrollers based on the 32-bit ARM RISC processor. It features a 256 Kbyte high-speed Flash and a 64 Kbyte SRAM, a large set ...
2024-12-09 22:38:25
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... dBc HD3 @ 10 MHz −81 dBc HD3 @ 50 MHz Low input voltage noise: 2.2 nV/√Hz High speed −3 dB bandwidth of 1.5 GHz, G = 1 Slew rate: 4700 V/μs 0.1 dB ...
2024-12-09 22:38:25
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... dBc HD3 @ 10 MHz −81 dBc HD3 @ 50 MHz Low input voltage noise: 2.2 nV/√Hz High speed −3 dB bandwidth of 1.5 GHz, G = 1 Slew rate: 4700 V/μs 0.1 dB ...
2024-12-09 22:38:25
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