461 - 470 of 2011
high power transistor
Selling leads
|
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS ...
2024-12-09 22:37:32
|
|
Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such ...
2024-12-09 22:41:27
|
|
...High Speed Optocouplers 1 Mb/s 3750Vrms Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated ...
2024-12-09 22:37:47
|
|
BTA12-600BW transistor 12A TRIACS Features Medium current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for ...
2024-12-09 22:38:38
|
|
Thyristors BT151 series GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high ...
2024-12-09 22:38:51
|
|
Silicon NPN Epitaxial Type (PCT Process) 2SC2482 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV ...
2024-12-09 22:41:27
|
|
..., 16-lead LFCSP TUE: ±0.1% of FSR maximum Offset error: ±1.5 mV maximum Gain error: ±0.1% of FSR maximum High drive capability: 20 mA, 0.5 V from ...
2024-12-09 22:41:39
|
|
IRLL110, SiHLL110 Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration ...
2024-12-09 22:38:51
|
|
IRF1010EPbF HEXFET® Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast ...
2024-12-09 22:38:51
|
|
IRFP9240, SiHFP9240 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast ...
2024-12-09 22:38:51
|