301 - 310 of 2011
high power transistor
Selling leads
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STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET General Features TYPE ...
2024-12-09 22:38:38
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2SA1761 Power Mosfet Transistor Electronics Components Chip IC Electronics • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = ...
2024-12-09 22:41:27
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STP4NK60Z - STP4NK60ZFP STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK Zener-Protected SuperMESHTMPower MOSFET ...
2024-12-09 22:41:27
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... in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. QUICK ...
2024-12-09 22:41:27
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1. General description The 74AHC595; 74AHCT595 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They ...
2024-12-09 22:41:27
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PNP GENERAL PURPOSE TRANSISTORS FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA ...
2024-12-09 22:41:27
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2N6052 PNP DARLICM GROUPON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360 . . . designed for general−purpose amplifier and low ...
2024-12-09 22:41:27
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2SC3265Y Rectifier Diode Transistor Electronics Components Chip IC Electronics Low Frequency Power Amplifier Applications Power Switching Applications ...
2024-12-09 22:41:27
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...Transistors N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SC-70 Description This MOSFET has been designed to minimize the on-state resistance ...
2024-12-09 22:48:58
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... power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • fT = 25 GHz technology adopted • ...
2024-12-09 22:38:25
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