China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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high power diode

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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1071 - 1080 of 2033

high power diode

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Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MOC3041M 18232 FSC 16+ DIP MOC3052VM 19226 FAIRCHILD 16+ DIP-6 MOC3063SR2M 12126 FSC 15+ ... 2024-12-09 22:38:25
Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package PLA140 1500 CPCLARE 05+ DIP-6 PDTC114ET 20000 16+ SOT PDTA114ET 20000 16+ SOT NCV7356D2R2G ... 2024-12-09 22:38:25
... Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A ... 2024-12-09 22:38:38
TDA2003A 10 W car radio audio amplifier Features ■ Improved performance over the TDA2002 (pinto-pin compatible) ■ Very low number of external ... 2024-12-09 22:38:51
TDA2030A 18W Hi-Fi AMPLIFIER AND 35W DRIVER DESCRIPTION The TDA2030A is a monolithic IC in Pentawatt  package intended for use as low frequency class ... 2024-12-09 22:38:51
Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate ... 2024-12-09 22:41:27
SGP02N120, SGB02N120, SGD02N120 Fast S-IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs ... 2024-12-09 22:41:27
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ... 2024-12-09 22:41:27
BT139 series E Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general ... 2024-12-09 22:41:27
BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ... 2024-12-09 22:41:27
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