STP10NK80Z - STP10NK80ZFP
STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected
SuperMESH™Power MOSFET
| TYPE | VDSS | RDS(on) | ID | Pw |
STP10NK80Z STP10NK80ZFP STW10NK80Z | 800 V 800 V 800 V | < 0.90 Ω < 0.90 Ω < 0.90 Ω | 9 A 9 A 9 A | 160 W 40 W 160 W |
■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization
of ST’s well established stripbased PowerMESH™ layout. In addition
to pushing on-resistance significantly down, special care is taken
to ensure a very good dv/dt capability for the most demanding
applications. Such series complements ST full range of high voltage
MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit |
| STP10NK80Z | STP10NK80ZFP | STW10NK80Z |
| VDS | Drain-source Voltage (VGS = 0) | 800 | V |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 800 | V |
| VGS | Gate- source Voltage | ± 30 | V |
| ID | Drain Current (continuous) at TC = 25°C | 9 | 9 (*) | 9 | A |
| ID | Drain Current (continuous) at TC = 100°C | 6 | 6 (*) | 6 | A |
| IDM (•) | Drain Current (pulsed) | 36 | 36 (*) | 36 | A |
| PTOT | Total Dissipation at TC = 25°C | 160 | 40 | 160 | W |
| | Derating Factor | 1.28 | 0.32 | 1.28 | W/°C |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 4 | KV |
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns |
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
Tj Tstg | Operating Junction Temperature Storage Temperature | -55 to 150 -55 to 150 | °C |
(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Stock Offer (Hot Sell)
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