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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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high frequency transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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high frequency transistor

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... DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting ... 2024-12-09 22:41:27
... in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. ‹ QUICK ... 2024-12-09 22:41:27
1. General description The 74AHC595; 74AHCT595 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They ... 2024-12-09 22:41:27
GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and ... 2024-12-09 22:41:27
Power Transistor (−100V , −2A) 2SB1580 / 2SB1316 Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base ... 2024-12-09 22:41:27
PNP GENERAL PURPOSE TRANSISTORS FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA ... 2024-12-09 22:41:27
Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION · ·With TO-220C package ·Complement to type TIP32/32A/32B/32C APPLICATIONS ·Medium power ... 2024-12-09 22:41:39
...TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small ... 2024-12-09 22:42:04
... NPN PNP Transistors N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SC-70 Description This MOSFET has been designed to minimize the on-state ... 2024-12-09 22:48:58
... Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K APPLICATION... 2024-12-09 22:48:58
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