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12lga igbt power module
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STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 ...
2026-01-05 15:51:23
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...Power MOSFET Gate Drive IGBT Gate Drive The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is ...
2026-01-05 15:51:23
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IR2110PBF power MOSFET and IGBT drivers Ic Chip Half-Bridge Gate Driver IC 14-DIP Description The IR2110/IR2113 are high voltage, high speed power ...
2026-01-05 15:51:23
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IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT ...
2026-01-05 15:51:23
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IR2130STRPBF 3-PHASE BRIDGE DRIVER high voltage, high speed power MOSFET and IGBT driver Description The IR2109(4)(S) are high voltage, high speed ...
2026-01-05 15:51:23
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... output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high ...
2026-01-05 15:51:23
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: ...
2026-01-05 15:51:23
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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ...
2026-01-05 15:51:23
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 ...
2026-01-05 15:51:23
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Field Effect Transistor AUIPS7145RTR NEW AND ORIGINAL STOCK [Who we are?] Founded in 1998, Shenzhen CM GROUP Electronic Technology Co., Ltd.is a ...
2026-01-05 15:51:23
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