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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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12lga igbt power module

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
View Contact Details
81 - 90 of 729

12lga igbt power module

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FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • ... 2024-12-09 22:38:38
STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 ... 2024-12-09 22:38:51
...Power MOSFET Gate Drive IGBT Gate Drive The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is ... 2024-12-09 22:42:04
IR2110PBF power MOSFET and IGBT drivers Ic Chip Half-Bridge Gate Driver IC 14-DIP Description The IR2110/IR2113 are high voltage, high speed power ... 2024-12-09 22:37:47
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT ... 2024-12-09 22:37:47
IR2130STRPBF 3-PHASE BRIDGE DRIVER high voltage, high speed power MOSFET and IGBT driver Description The IR2109(4)(S) are high voltage, high speed ... 2024-12-09 22:37:47
... output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high ... 2024-12-09 22:37:59
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: ... 2024-12-09 22:38:38
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ... 2024-12-09 22:38:51
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 ... 2024-12-09 22:41:27
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