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12lga igbt power module
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The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL ...
2024-12-09 22:41:27
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...Power Transistors TIP31/31A/31B/31C DESCRIPTION · ·With TO-220C package ·Complement to type TIP32/32A/32B/32C APPLICATIONS ·Medium power linear ...
2024-12-09 22:41:39
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... Applications 8 mA (TYP) Standby Current 2 Description The SG2524 and SG3524 devices incorporate all the functions required in the construction of ...
2024-12-09 22:37:32
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Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Power Switching • Hard Switched and High ...
2024-12-09 22:38:38
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Silicon NPN Power Transistors BD439 BD441 DESCRIPTION • With TO-126 package • Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and ...
2024-12-09 22:38:51
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...power mosfet trench power mosfet Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • ...
2024-12-09 22:41:27
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... external parts count when used in designing all types of switching power sup- plies. The on-chip + 5.1 V reference is trimmed to ± 1 % and the ...
2024-12-09 22:37:59
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Surface Mount rectifier diode module , Signal Schottky diode BAT54C Surface Mount Schottky Barrier Single/Dual Diodes Schottky-Barrier Einzel-/Doppel...
2024-12-09 22:41:39
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High Voltage Rectifier Diode Module 1500w Suppressor 1.5KE250CA 1.5KE250CA 1500W TRANSIENT VOLTAGE SUPPRESSOR IC FEATURES 1500W Peak Pulse Power ...
2024-12-09 22:41:39
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FEATURES Excellent Video Performance Differential Gain and Phase Error of 0.01% and 0.05 High Speed 130 MHz 3 dB Bandwidth (G = +2) 450 V/s Slew Rate ...
2024-12-09 21:22:44
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