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low on resistance mosfet power electronics
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... Current: 110A • Drain-Source On-State Resistance: 0.033 Ohms • Maximum Operating Temperature: +175 °C • Mounting Type: Through Hole • Transistor ...
2024-12-09 22:28:51
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... MOSFET Power Electronics High Performance HighEfficiency Switching Description: This N-Channel MOSFET is designed for high current switching ...
2024-12-09 22:28:51
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Product Description: - Advanced Trench Technology - Low On-Resistance - High Efficiency Performance - Improved Gate Charge Characteristics - Low Gate ...
2024-12-09 22:28:51
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... Voltage (Vdss): 100V • Gate-Source Voltage (Vgs): ±20V • Drain Current (Id): 75A • Drain-Source On-state Resistance (RDS(on)): 0.0045Ω • Power ...
2024-12-09 22:28:51
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... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through ...
2024-12-09 22:28:51
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...MOSFET transistor is a high-performance N channel device with a voltage rating of 200 V and a maximum current rating of 18 A. It features a low on...
2024-12-09 22:28:51
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...MOSFET made by International Rectifier. 2. It features a low on-resistance of 1.2 ohms and a drain-source voltage of 60V. 3. It is capable of ...
2024-12-09 22:28:51
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Description: This BSC035N10NS5ATMA1 MOSFET is an N-Channel enhancement mode field-effect transistor with low on-resistance and low gate charge. It is ...
2024-12-09 22:28:51
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Features: - N-Channel Enhancement Mode - Low On-Resistance: 4.7 mΩ (max) @ VGS = 10 V - Low Gate Charge: 17 nC (max) - Low Input/Output Capacitance: 5 ...
2024-12-09 22:28:51
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... MOSFET Description: This MOSFET is a high-efficiency, high-performance, low-cost, high-reliability device with a wide range of applications. ...
2024-12-09 22:28:51
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