BSC320N20NS3G MOSFET Power Electronics High Performance HighEfficiency Switching

BSC320N20NS3G MOSFET Power

Electronics High Performance HighEfficiency Switching

Description:

This N-Channel MOSFET is designed for high current switching applications. It has an operating temperature range of -55°C to 175°C and a drain-source on-state resistance of 0.0167Ω at 25°C. The device can handle up to 32A of drain current and has a drain-source breakdown voltage of 20V (min). It also has a gate-source voltage of ±20V.

Parameters:

• Drain-Source Voltage: 20V
• Gate-Source Voltage: ±20V
• Drain Current: 32A (Tc = 25°C)
• Drain-Source On-State Resistance: 0.0167Ω (Tc = 25°C)
• Drain-Source Breakdown Voltage: 20V (Min)
• Operating Temperature Range: -55°C to 175°C

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