BSC035N10NS5ATMA1 MOSFET Power Electronics IRFP4310ZPBF For High-Performance Applications

Description: This BSC035N10NS5ATMA1 MOSFET is an N-Channel enhancement mode field-effect transistor with low on-resistance and low gate charge. It is designed for use in high-efficiency switching applications.

Parameters:

- Drain-Source Voltage: 100V
- Continuous Drain Current: 35A
- Gate-Source Voltage: ±20V
- RDS(on): 1.8mΩ
- Input Capacitance (Ciss) : 450pF
- Operating Temperature: -55°C to 175°C

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