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Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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low on resistance mosfet power electronics

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low on resistance mosfet power electronics

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MOSFET Power Electronics SQ2315ES-T1_BE3 High Performance Low Voltage NChannel Product Parameters: • Drain-Source Voltage (Vdss): 600V • Id @ 25°C: ... 2024-12-09 22:28:51
... Drain Source On-State Resistance: 0.0047 Ohm • RDS(on) at VGS = 10V: 0.0047 Ohm • Maximum Operating Temperature: 175°C • Packaging: Reel • Lead ... 2024-12-09 22:28:51
...switching applications. It has a drain-source breakdown voltage of 100V, a drain-source resistance of 0.032 Ohm, and a gate-source threshold ... 2024-12-09 22:28:51
...MOSFET power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain-source voltage of 400V. 3. It is a ... 2024-12-09 22:28:51
...MOSFET Power Electronics High-Performance High-Reliability Solution for Your Applications Description: This is an advanced power MOSFET designed ... 2024-12-09 22:28:51
...MOSFET Power Electronics High-Performance High-Reliability Switching Solution Product Features: • N-channel MOSFET • 117A Continuous Drain Current ... 2024-12-09 22:28:51
Product Listing: SIHG22N60E-GE3 MOSFET Features: - 600V N-Channel MOSFET - Highest efficiency and superior switching performance - Low input ... 2024-12-09 22:29:06
...MOSFET Power Electronics High Efficiency Reliability Solution Description: This is a N-Channel MOSFET that is ideal for applications such as motor ... 2024-12-09 22:29:06
...MOSFET Power Electronics The FDS2582 is an N-Channel Enhancement Mode MOSFET designed for low voltage, high current switching applications. It has ... 2024-12-09 22:29:06
N-Channel PowerTrench FDD7N25LZTM MOSFET Power Electronics N-Channel UniFETTM 250 V 6.2 A 550 mΩ reduce on-state resistance Drain to Source Voltage ... 2024-12-09 22:29:06
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