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ao4612 mosfet in power electronics
Selling leads
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SI7430DP-T1-GE3 MOSFET Power Electronics High Performance Low Voltage Small Size Solution Features: • Enhanced channel temperature and power rating ...
2024-12-09 22:28:51
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...MOSFET Ideal for Power Electronics Applications Features: • Low On-Resistance • Low Gate Threshold Voltage • High Forward Transfer Admittance • Low ...
2024-12-09 22:28:51
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...MOSFET High-Performance Power Electronics Solution for High Current Applications Parameters: • Package: TO-220 • Transistor Type: N-Channel • Vds – ...
2024-12-09 22:29:06
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... (Vgs): ±20V • Continuous Drain Current (Id): 6A • RDS(on): 0.043Ω • Pulsed Drain Current (Idm): 10A • Maximum Power Dissipation (Pd): 8W • ...
2024-12-09 22:29:06
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...Current - Continuous Drain (Id) @ 25°C: 11A • Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 25V • Power - Max: 500mW • Operating Temperature: -55°C ...
2024-12-09 22:29:06
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...MOSFET Power Electronics 4.4 Amps 20 Volts P−Channel TSOP−6 Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) ...
2024-12-09 22:29:06
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... 12 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V FET Feature - Power Dissipation (Max) 1.6W (Ta)
2024-12-09 22:29:06
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...MOSFET Power Electronics Module Single P-Channel WDFN8 -100 V 120 m -13 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25...
2024-12-09 22:29:06
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... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 24 V FET Feature - Power Dissipation (Max) 840mW (Ta)
2024-12-09 22:29:06
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... 20 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V FET Feature - Power Dissipation (Max) 8.3W (Ta)
2024-12-09 22:29:06
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