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ao4612 mosfet in power electronics
Selling leads
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... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through ...
2024-12-09 22:28:51
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SIHG33N60EF-GE3 600V N-Channel Power MOSFET Product Features: - 600V N-Channel Power MOSFET - High Power and Low Gate Charge - Low On-Resistance - Low ...
2024-12-09 22:28:51
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...Continuous Drain Current (ID): 5.5A 4. On-State Resistance (RDS(on)): 0.84Ω 5. Power Dissipation (PD): 9.2W 6. Operating Temperature: -55°C to 150...
2024-12-09 22:28:51
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...package; reinforced with a copper clip -High temperature operation; up to 175°C Applications: -DC-DC converters -Power supplies -Motor control -LED ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Package for High Power Applications N-Channel 30 V 3.5A (Ta) 500mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - ...
2024-12-09 22:29:06
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...MOSFET Power Electronics - High Performance Low Loss Power Switching Solution for Industrial Applications Drain to Source Voltage (Vdss) 800 V ...
2024-12-09 22:29:06
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...MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain ...
2024-12-09 22:29:06
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...) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V FET Feature - Power Dissipation (Max) 329mW (Ta)
2024-12-09 22:29:06
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...) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V FET Feature - Power Dissipation (Max) 329mW (Ta)
2024-12-09 22:29:06
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IRF9Z24NPBF MOSFET Power Electronics High Performance High Voltage Switching for High Power Applications Features: • N-Channel Enhancement Mode • ...
2024-12-09 22:28:51
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