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ao4612 mosfet in power electronics
Selling leads
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...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) ...
2024-12-09 22:28:51
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...-Source Voltage: 20V • Gate-Source Voltage: -20V • Continuous Drain Current: 17A • Pulsed Drain Current: 27A • Power Dissipation:
2024-12-09 22:28:51
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...MOSFET High Performance Power Electronics for Improved Efficiency Features: - 100V Drain-Source Breakdown Voltage - 175A Continuous Drain Current ...
2024-12-09 22:28:51
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... Specifications: • Drain-Source Voltage: -100V • Drain Current-Continuous: -44A • Gate-Source Voltage: -20V • Power Dissipation: -68W • Operating ...
2024-12-09 22:28:51
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...MOSFET Power Electronics for High-Performance Applications Features: • Low on-resistance RDS(on): 7.8mΩ (max) • Fast switching • Low gate charge • ...
2024-12-09 22:28:51
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... Charge - Low Input Capacitance - Fast Switching - Lead-Free and RoHS Compliant Application: - Motor Control - Automotive - Switching Power ...
2024-12-09 22:28:51
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... - Pulsed Drain Current (Idm): 60A - Rds(on): 0.019Ω - Input Capacitance (Ciss): 4200pF - Power Dissipation (Pd): 7.2W - Operating and Storage ...
2024-12-09 22:28:51
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IRFBG30PBF MOSFET High Performance Power Electronics for Optimal Efficiency Description: The IRFBG30PBF is a high-performance N-Channel enhancement...
2024-12-09 22:28:51
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...-Source Breakdown Voltage (Vds): 100V • Gate-Source Voltage (Vgs): +/- 20V • Continuous Drain Current (Id): 34A • Power Dissipation (Pd): 143W • ...
2024-12-09 22:28:51
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...MOSFET High-Performance Power Electronics for Maximum Efficiency and Reliability Features: • Low On-Resistance • Low Gate Charge • Low Threshold • ...
2024-12-09 22:28:51
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