IRFBG30PBF MOSFET High Performance Power Electronics for Optimal Efficiency

IRFBG30PBF MOSFET High

Performance Power Electronics for Optimal Efficiency

Description:

The IRFBG30PBF is a high-performance N-Channel enhancement-mode silicon gate power field-effect transistor designed for high-density applications. This device offers low on-state resistance, fast switching speed, and improved maximum ratings. It is suitable for applications such as switching regulators, converters, and motor control systems.

Parameters:

- Package: TO-220AB

- Drain-Source Voltage: 30V

- Gate-Source Voltage: ±20V

- Continuous Drain Current: 30A (Tc = 25°C)

- Drain-Source On-State Resistance: 0.022 ohm (VGS = 10V)

- Maximum Power Dissipation: 175W (Tc = 25°C)

- Operating Temperature: -55°C to 150°C

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