IRF740PBF Ultra-Low On-Resistance MOSFET Ideal for Power Electronics Applications

IRF740PBF Ultra-Low On-Resistance MOSFET Ideal for Power Electronics Applications

Features:

• Low On-Resistance
• Low Gate Threshold Voltage
• High Forward Transfer Admittance
• Low Input Capacitance
• Low Output Capacitance
• High Speed Switching
• Avalanche Energy Rated
• 150°C Operating Junction Temperature

Specifications:

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 5A
• Gate-Source Voltage (VGS): 10V
• Power Dissipation (PD): 28W
• On-Resistance (RDS(ON)): 0.042Ω
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C

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