China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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n channel high power mos

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel high power mos

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...High Voltage MOSFET For Switch Mode Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) ... 2025-02-08 13:29:41
... CS10N70A8 TO-220F N 10 700 ±30 2 3.5 980 Product Description: One of the most notable features of this MOSFET is its low ON resistance, which ... 2025-02-08 13:29:41
... Typ CS4N65A2 TO-220F N 4 650 ±30 2 4 2220 2570 Product Description: One of the key features of this MOSFET is its low ON resistance, which ensures ... 2025-02-08 13:29:46
...High Voltage MOSFET N-Type CS20N50A8 TO-220F For Power Supplies Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg ... 2025-02-08 13:29:43
...High Voltage MOSFET N Type For Power Supplies TO-251 Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-08 13:29:33
... Typ CS16N60A8 TO-220F N 16 600 ±30 3 4 360 480 71 2250 Product Description: One of the key features of the CS High Voltage MOSFET is its low ON ... 2025-02-08 13:29:30
...High Voltage Mosfet For Power Supply Units Fast Switching Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) ... 2025-02-08 13:29:42
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
... CS28N50A6 TO-247 N 28 500 ±30 2 4 200 240 Product Description: With 100% avalanche tested technology, this MOSFET can withstand high voltages and ... 2025-02-08 13:29:27
...High Voltage MOSFET TO-220AB AC To DC Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF... 2025-02-08 13:29:45
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