China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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n channel high power mos

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel high power mos

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*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
50A200V N Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V... 2025-04-01 14:35:10
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190B Package:TO-247 MAIN CHARACTERISTICS ID:30A VDSS:650V RDSON-typ VGS=10V:120mΩ ... 2025-07-11 00:37:58
LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) ... 2025-02-08 13:28:40
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-11 00:37:58
...channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate ... 2025-07-11 00:37:58
...Power Efficiency Silicon Low Voltage MOSFET For TO-220F Package LG120N085AP Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS... 2025-04-01 14:35:08
... voltage • Short circuit withstands time 10μs • High ruggedness performance • Easy parallel switching capability APPLICATIONS • Inverter TO-247 • ... 2025-07-11 00:37:58
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