China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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n channel high power mos

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel high power mos

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...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...Channel Super Junction MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERI... 2025-07-11 00:37:58
...MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON... 2025-07-11 00:37:58
...MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
... switching capability APPLICATIONS • Energy storage • Solar string inverter • Uninterruptible power supplies Q1.Who are we? A:We are based in ... 2025-07-11 00:37:58
Tighter VSD Specifications High Voltage MOSFET N Channel Cool Mos *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ... 2025-07-11 00:37:58
...Mos The Semiconductor For Power Applications This particular product is a Type N semiconductor with low junction capacitance, making it ideal for ... 2025-07-11 00:37:58
...High Current Cool Mos N-channel Super Junction MOSFET Part No.:LC65R075B Package:TO-247 MAIN CHARACTERISTICS ID:47A VDSS:600V RDSON-typ VGS=10V:68m... 2025-07-11 00:37:58
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