China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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n channel high power mos

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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n channel high power mos

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Product Description: N Type High Temperature Resistance Low Leakage Low Junction Capacitance Power Semiconductor Designed with a low junction ... 2025-07-11 00:37:58
Product Description: N Type Low Leakage Low Capacitance High Temperature Resistance Semiconductor High Voltage Power Semiconductors are characterized ... 2025-07-11 00:37:58
...High Power MOSFET N-Channel Multiscene Industrial Mos N-Channel Enhancement Mode Power MOSFET Part No.:CS3N50A2 Package:TO-251 MAIN CHARACTERISTICS ... 2025-07-11 00:37:58
N Channel High Voltage MOSFET Cool Mos For Power Switch Circuit Of Adaptor And Charger *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
.... This product is known for its low junction capacitance and N-type design, which makes it ideal for use in charging pile and renewable energy ... 2025-07-11 00:37:58
...High Power MOSFET N Channel Stable For Motor Driver Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche ... 2025-07-11 00:37:58
...Power High Temperature Resistant Low Leakage N Channel IGBT Our High Voltage Power Semiconductors are capable of handling high voltages and ... 2025-07-11 00:37:58
...High Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • ... 2025-07-11 00:37:58
...Channel 15A 650V High Power IGBT TO-220F For Home Appliances MAIN CHARACTERISTICS IC @TC=100℃ 15A VCE 650V VCE(sat)-typ 1.60V FEATURES • High ... 2025-07-11 00:37:58
...) • Ultra Low On-Resistance • Reliable and Rugged Applications: • SMPS Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is ... 2025-07-11 00:37:58
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