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high power n channel mosfet
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...High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench ...
2025-07-11 00:37:58
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...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant. ...
2025-07-11 00:37:58
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...Channel 15A 650V High Power IGBT TO-220F For Home Appliances MAIN CHARACTERISTICS IC @TC=100℃ 15A VCE 650V VCE(sat)-typ 1.60V FEATURES • High ...
2025-07-11 00:37:58
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High Breakdown Voltage SiC MOSFET For Smart Home Device Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ...
2025-07-11 00:37:58
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Large EMI Margin Super Junction MOSFET For High Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;...
2025-07-11 00:37:58
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.... This product is known for its low junction capacitance and N-type design, which makes it ideal for use in charging pile and renewable energy ...
2025-07-11 00:37:58
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Product Description: N Type High Temperature Resistance Low Leakage Low Junction Capacitance Power Semiconductor Designed with a low junction ...
2025-07-11 00:37:58
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...High Power IGBT High Speed Switching For General Inverter N-Channel Enhancement Mode Power IGBT LGT25N120SB FEATURES • Trench and field-stop ...
2025-07-11 00:37:58
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...Power Supplies High Dense Super Junction Design with Large EMI Margin and High Density Product Description: As an N-type MOSFET, this device offers ...
2025-07-11 00:37:58
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Low On-Resistance High Voltage MOSFET Super Junction MOSFET For Power Electronics *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, ...
2025-07-11 00:37:58
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