China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power n channel mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel mosfet

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...Channel Super Junction MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERI... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...High Voltage Mosfet For Uninterruptible Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss ... 2025-02-10 11:19:53
...Channel Enhancement Mode Power MOSFET 11A 400V For Adaptor And Charger MAIN CHARACTERISTICS ID:11A VDSS:400V RDSON-typ (@VGS=10V):0.5Ω FEATURES ... 2025-07-11 00:37:58
...Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS... 2025-04-01 14:35:10
...High Power MOSFET TO-220F Package Fast Switching Applications: The High Power MOSFET is an ideal component for high-power applications, thanks to ... 2025-07-11 00:37:58
... MAX Typ Typ CS20N50A6 TO-247 N 20 500 ±30 2 4 210 270 Product Description: This N-type MOSFET is capable of handling high voltage, with a gate... 2025-02-08 13:29:39
... a product that is in perfect condition. It is made in China, a country known for producing high-quality electronics at a competitive price point. ... 2025-07-11 00:37:58
... Typ Typ CS10N65A2 TO-220F N 10 650 ±30 2 4 820 950 Product Description: With its low ON resistance, the CS MOSFET minimizes power loss and ... 2025-02-08 13:29:30
... MAX Typ Typ CS8N65A2 TO-220F N 8 650 ±30 2 4 1040 1500 24 1107 Product Description: One of the key highlights of this MOSFET is its low ON ... 2025-02-08 13:29:28
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