China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power n channel mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel mosfet

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... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ... 2025-07-11 00:37:58
...Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology • High speed ... 2025-07-11 00:37:58
Product Description: Voltage Low Leakage Junction Capacitance High Temperature Resistance Semiconductor Bolstering Technology The High-temperature ... 2025-07-11 00:37:58
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...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
...channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate ... 2025-07-11 00:37:58
... voltage • Short circuit withstands time 10μs • High ruggedness performance • Easy parallel switching capability APPLICATIONS • Inverter TO-247 • ... 2025-07-11 00:37:58
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