China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power n channel mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel mosfet

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...MAX Typ Typ CS10N60A2 TO-220F N 10 600 ±30 2 4 660 900 32 1609 Product Description: This MOSFET can handle high voltage and is an ideal component ... 2025-02-08 13:29:45
...Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
...Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ ... 2025-07-11 00:37:58
...Extremely low switching loss • Excellent stability and uniformity • Fast Recovery Time APPLICATIONS • Switch Mode Power Supply(SMPS) • Uninterrupti... 2025-07-11 00:37:58
... management and reduces power loss. The MOSFET is made from high-quality silicon material which ensures high efficiency and reliable performance. ... 2025-07-11 00:37:58
Tighter VSD Specifications High Voltage MOSFET N Channel Cool Mos *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ... 2025-07-11 00:37:58
...MOSFETs with Guaranteed Low Rds(ON) Resistance LG80N10AP Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON... 2025-02-08 13:28:59
...Power MOSFET TO-220AB Package For Digital Logic Circuits Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON... 2025-02-08 13:29:14
... • Fast Recovery Body-Diode • Lower Gate Resistance • 100% Avalanche Tested APPLICATIONS • Soft Switching Topologies • Telecom and Sever Power ... 2025-02-12 07:30:10
... MAX Typ Typ CS2N65A2 TO-220F N 2 650 ±30 3 4 4000 4500 11 295 Product Description: The High Voltage MOSFET product features a gate-source voltage ... 2025-02-08 13:29:30
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