China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power n channel mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power n channel mosfet

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...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...) • Ultra Low On-Resistance • Reliable and Rugged Applications: • SMPS Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is ... 2025-07-11 00:37:58
11A 650V 340mΩ TO-252 High Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ... 2025-07-11 00:37:58
...Channel Super Junction MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERISTICS ID:5A ... 2025-07-11 00:37:58
... high temperatures makes it suitable for use in harsh environments. The device is designed to handle high voltage applications, making it ideal for ... 2025-07-11 00:37:58
...High Power MOSFET Heat Dissipation Metal Oxide Mosfet Product Description: The MOSFET is a type N device and has a gate-source voltage (Vgs) of ... 2025-07-11 00:37:58
High Power MOSFET Power Management Solution For Industrial Applications Features: High Power MOSFET is perfect for use in switching power supply ... 2025-07-11 00:37:58
...High Power MOSFET Silicon Power Transistors Product Description: One of the most important features of this MOSFET is its high switching speed. ... 2025-07-11 00:37:58
...High Power MOSFET TO-247 For Uninterruptible Power Supply Product Description: This series MOSFET is a type N device that is specifically designed ... 2025-07-11 00:37:58
... with ease. The N-type design ensures low on-resistance and high current handling capability, making it an ideal choice for power electronics ... 2025-07-11 00:37:58
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