261 - 270 of 292
enhanced high power igbt
Selling leads
5A 650V 780mΩ N Channel Super Junction MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERIST...
2025-07-11 00:37:58
|
... to improved on-state efficiency, which is essential for any power device. Additionally, the MOSFET has a much lower FOM, which further enhances ...
2025-07-11 00:37:58
|
...Power Management Product Description: Our Schottky Barrier Diodes come in a variety of packages such as TO-251, TO-252, TO-263, TO-220, and TO-247, ...
2025-07-11 00:37:58
|
...high-quality power discrete device for your telecom or server power supply needs, the Lingxun Super Junction MOSFET is an excellent choice. This N...
2025-07-11 00:37:58
|
... For Power Management Product Description: Our Low VF Schottky diodes offer 20A half wave and 40A full wave rectification, making them ideal for ...
2025-07-11 00:37:58
|
...RoHS compliant TYPICAL APPLICATIONS · Solar inverter · Power factor correction · Data Center · Switch mode power supply Benefits · High-speed ...
2025-07-11 00:37:58
|
... power consumption. The use of high-quality silicon material ensures reliable performance and long-term durability. With its low power loss, this ...
2025-07-11 00:37:58
|
... management and reduces power loss. The MOSFET is made from high-quality silicon material which ensures high efficiency and reliable performance. ...
2025-07-11 00:37:58
|
.... With low power loss and low gate charge, this MOSFET helps to minimize switching loss and reduce power consumption, making it an ideal choice for ...
2025-07-11 00:37:58
|
... breakdown voltage, and high saturation velocity. These properties make the Silicon Carbide MOSFET ideal for high-frequency applications. It is ...
2025-07-11 00:37:58
|