China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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enhanced high power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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enhanced high power igbt

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... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ... 2025-07-11 00:37:58
... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ... 2025-07-11 00:37:58
... speeds and low power dissipation. With its low RDS(ON) resistance, our MOSFET product can handle high current loads with minimal power loss, ... 2025-07-11 00:37:58
...packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area... 2025-07-11 00:37:58
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...High Current Low VF Schottky Diodes For Power Supply Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) ... 2025-07-11 00:37:58
High Current Capability Schottky Barrier Diodes For DC/DC conerters Features • Low forward voltage • High current capability • High forward surge ... 2025-07-11 00:37:58
... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various ... 2025-04-01 14:35:06
... with less power loss. This feature makes it highly efficient, making it suitable for applications where high efficiency is a must. It is perfect ... 2025-07-11 00:37:58
...Power Supplies Product Description: One of the standout features of the Lingxun Super Junction MOSFET is its proprietary new super-junction ... 2025-07-11 00:37:58
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