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enhanced high power igbt
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High Temperature Tolerance Silicon Carbide MOSFET For Electric Power *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ...
2025-07-11 00:37:58
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High Breakdown Voltage Silicon Carbide MOSFET For Power Inverters *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: ...
2025-07-11 00:37:58
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Power Discrete Devices Super Junction MOSFET Low On Resistance SJ MOS For Lighting Product Description: One of the key advantages of the Super ...
2025-07-11 00:37:58
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...Power Supplies Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) Min (V) If (A) Typ (V) Max (V) Typ (uA) Max (uA...
2025-07-11 00:37:58
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... 15 0.64 0.73 11 50 - - - 220 150 Product Description: One of the key features of the Low VF Schottky product is its high surge capability. This ...
2025-07-11 00:37:59
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... - 0.73 8 30 5 0.63 2.7 100 Product Description: The Low VF Schottky product is designed to provide fast switching speed and high efficiency, ...
2025-07-11 00:37:59
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...Power Rectifier Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Trr Tj (℃) Min (V) If (A) Typ (V) Max (V) Typ ...
2025-07-11 00:37:58
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...High reverse saturation current Schottky Diodes Unbeatable Performance MBR10200FCT Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR ...
2025-07-11 00:37:59
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High Durability Silicon Low Gate Threshold Voltage Mosfet TO-251 Product Description: Our MOSFET is made of high-quality silicon material, ensuring ...
2025-07-11 00:37:58
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...High Current Capability SBT40L45PT TO-247 Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min ...
2025-07-11 00:37:58
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