China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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enhanced high power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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enhanced high power igbt

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... 150 Product Description: The Low VF Schottky diode features a low forward voltage drop, making it ideal for use in power supply units, motor ... 2025-07-11 00:37:58
...High Reverse Saturation Current Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) If (A) Typ (V) Max (V) Typ (uA... 2025-07-11 00:37:58
LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) ... 2025-02-08 13:28:40
... 20 50 3 0.28 11 180 150 Product Description: This product's fast switching capability allows for faster and more efficient power management, 2025-02-08 13:31:38
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-11 00:37:58
Power Frequency Solution Silicon Carbide Schottky Barrier Diodes For Industrial Fan *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
...High Power MOSFET TO-220F Package Fast Switching Applications: The High Power MOSFET is an ideal component for high-power applications, thanks to ... 2025-07-11 00:37:58
... • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIO... 2025-07-11 00:37:58
5A 650V 780mΩ N Channel Super Junction MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 ... 2025-07-11 00:37:58
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