China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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n channel mosfet transistor

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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n channel mosfet transistor

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BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power ... 2024-12-09 12:12:55
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES • High power and High Gain: Pout>100W, Gp>11... 2024-12-09 12:12:55
BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power ... 2024-12-09 18:59:29
BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A 600 W extremely rugged LDMOS power transistor for broadcast and ... 2024-12-09 18:59:29
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES • High power and High Gain: Pout>100W, Gp>11... 2024-12-09 18:59:29
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor ... 2024-12-09 12:12:55
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor ... 2024-12-09 18:59:29
PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat ... 2024-12-09 18:59:29
MRF6V3090NBR1 RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-272 WB-4 Designed for broadcast and commercial aerospace broadband applications with ... 2024-12-09 12:12:55
BLF188XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 24.4dB 1400W SOT539A Features eXtremely rugged high-power delivery up to 1400 W ... 2024-12-09 18:59:29
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